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EMS8E 47204 93000 A2031 03929 W567S210 FBR522 TD62107
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  a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv cbo i c = 2.0 ma 50 v bv ebo i c = 2.0 ma 3.0 v i cbo v cb = 28 v 0.5 ma h fe v ce = 5 v i c = 0.4 a 15 150 --- p g c v cc = 28 v p in = 0.85 w f = 1.5 - 1.7 ghz pulse width = 100 s duty cycle = 10% 8.5 50 54 db % npn rf power transistor MSC74012 description: the asi MSC74012 is a common base device designed for cw applications in the 1.5 - 1.7 ghz bands. features include: ? ? ? ? input/output matching ? gold metallization ? hermetically sealed package ? ? ? ? emitter ballasting maximum ratings i c 0.6 a v cbo 50 v p diss 20 w @ t c = 25 o c t j -55 o c to+200 o c t stg -55 o c to+200 o c jc 9.0 o c/w package style 400 2l flg (e) 1 = collector 2 & 4 = base 3 = emitter


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